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Oxygen Vacancy Engineering via High-Ionization-Potential Doping for Neuromorphic Visual Reservoir Computing

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Year: 2026
Type: article
Source: ACS Applied Electronic Materials
DOI: 10.1021/acsaelm.6c00325
Authors: Xinyi Shen, Dongjun Li, Jiawei Yang, Jing Wang, Jingxue Zhao, Haoran Wang, Huanhuan Wei, Shanshan Jiang, Gang He
Institution: Anhui University
Language: English

Topic: Advanced Memory and Neural Computing
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Anhui University, China Postdoctoral Science Foundation, University Natural Science Research Project of Anhui Province
Awards: G1513659146, G1636081630, G1955844213, G3329910227, G5145469494, G539474978, G6538410031, 高k栅介质/金属栅锑化镓MOS器件中的关键物理问题研究
OpenAlex ID: W7141692400
FWCI:
Cites: 49
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