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Engineering Interface Fixed Charges in AlON/SiO 2 via In Situ Nitrogen Doping: Toward Threshold-Voltage Matching for SiC CMOS

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.6c00317

Authors: Hang Su, Cheng Zhang, Xuetong Zhou, Zhongyu Liu, Changzhe Zhao, Liujun Long, Jiayu Zeng, Li Zheng, Xinhong Cheng

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Shanghai Municipal Human Resources and Social Security Bureau

Awards: G1268383517, G305616913, G4047859883, G4201756145

OpenAlex ID: W7141862938

FWCI:

Cites: 32

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