Heteroepitaxial β‐Ga 2 O 3 Trench‐Gate MOSFET on 4H‐SiC: Trap, Thermal, and Breakdown Optimization
Year: 2026
Type: article
Source: physica status solidi (a)
Institutions: Jamia Millia Islamia, University of Southern Denmark
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7142498069