Work

Field-Induced Enhancement of Ferroelectric Switching in Hf 0.5 Zr 0.5 O 2 Capacitors under Cryogenic Conditions

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.6c00454

Authors: Seungbin Lee, Minjong Lee, Yeseo Choi, Hye Ryeon Park, Jongmug Kang, Hyeonhong Min, Gwanghyeon Jang, Yechan Kim, Dushyant M. Narayan, Ye-Eun Hong, Rino Choi, Min Hwan Lee, Jiyoung Kim, Si Joon Kim

Institutions: Kangwon National University, The University of Texas at Dallas, Inha University

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Kangwon National University, Korea Institute for Advancement of Technology, National Research Foundation of Korea

Awards: G1054456558, G3347771472, G3718120536, G7678149823, G907031473

OpenAlex ID: W7143641079

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Cites: 28

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