Work

Chip-Level-Integrated nMISFETs with Sputter-Deposited-MoS2 Thin Channel Passivated by Al2O3 Film and TiN Top Gate

Year: 2018

Type: conference-paper

Source: Institutional Repositories DataBase (IRDB)

Authors: 松浦賢太朗, K. Matsuura, 清水淳一, J. Shimizu, 外山真矢人, M. Toyama, 大橋匠, T. Ohashi, 宗田伊理也, I. Muneta, S. Ishihara, 角嶋邦之, K. Kakushima, 筒井一生, K. Tsutsui, 小椋厚志, A. Ogura, 若林整, H. Wakabayashi

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7145925870

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