Comparative Analysis of Heat Dissipation Distribution in Double‐Sided Cooling Si‐IGBT and SiC‐MOSFET Power Semiconductor Modules
Year: 2026
Type: article
Source: Electrical Engineering in Japan
DOI: 10.1002/eej.70027
Institutions: Hitachi (Japan), The University of Osaka
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W7146996144