Work

All-Oxide ITO/HZO/WO x Ferroelectric Tunnel Junctions with Oxygen-Engineered Interfaces for Highly Endurable Neuromorphic Computing

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.6c00989

Authors: Seungjoon Jeong, Huiseong Shin, Myeongjae Choi, Changwoo Han, Hyeonjung Park, Junseok Kim, Yejoo Choi, Changhwan Shin

Institutions: Korea University, Sungkyunkwan University, Samsung Electronics (South Korea)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Ministry of Trade, Industry and Energy, National Research Foundation of Korea

Awards: G3092914164, G623835629, G8468504417, G8636997118

OpenAlex ID: W7147521289

FWCI: 1.705

Cites: 52

Cited by: 1

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