Work

Effects of electron irradiation and thermal cycling on electrical properties of GaN HEMT

Year: 2026

Type: article

Source: Soldering and Surface Mount Technology

DOI: 10.1108/ssmt-11-2025-0063

Authors: Dan Han, Xiao Chen, Zicai Shen, Rui Chen, Rongxing Cao, Yang Liu, Hanxun Liu, Yuxiong Xue

Institutions: Yangzhou University, China Academy of Space Technology, Beijing Institute of Spacecraft Environment Engineering, Chinese Academy of Sciences, National Space Science Center

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7148633023

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Cites: 19

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