Pressure-induced reentrant superconductivity in the misfit layered compound ( SnS ) 1.15 ( Ta S 2 )
Year: 2026
Type: article
Abstract: Misfit layered compounds are natural van der Waals heterostructures in which electronically active transition-metal dichalcogenide layers are decoupled by incommensurate blocking layers, enabling bulk realization of quasi-two-dimensional quantum states. Here we investigate the superconducting, transport,and structural properties of the misfit compound $\mathrm{(SnS)_{1.15}(TaS_2)}$ under pressures up to 150 GPa. The low-pressure superconducting phase is gradually suppressed and disappears near 14.7 GPa,accompanied by increasing residual resistance. Remarkably, a distinct superconducting phase reemerges above 80 GPa and persists to the highest pressures achieved. This reentrant superconductivity follows a pressure-induced sign reversal of the Hall coefficient near 60 GPa and a nonmonotonic evolution of the normal-state resistance, indicating an electronic reconstruction. No structural phase transition is detected over the entire pressure range. Our results demonstrate a pressure-driven electronic reconstruction leading to reentrant superconductivity in a misfit layered compound, establishing pressure as an effective route to engineer superconductivity and electronic states in natural van der Waals heterostructures.
DOI: 10.1103/vcqm-h54l
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funders: National Science and Technology Council, National Natural Science Foundation of China, Academia Sinica, Indian Institute of Technology Roorkee, Natural Science Foundation of Shandong Province, Project of Shandong Province Higher Educational Science and Technology Program, Natural Science Foundation of Zhejiang Province
Awards: G2361049618, 准一维关联电子材料的奇异量子态调控研究, G2897324598, G3226131297, Exotic Quantum Phases of Frustrated Novel Kagome and Hyper- Kagome Quantum Magnets and Tunable Topological Dirac Surface States and Van Hove Singularities in Kagome Lattice., G5011538474, G5611970971, G5945759102, G6696663950, G8180420994, Development of a Cutting-Edge Semiconductor and Quantum Materials Single Crystal Growth Facility: Driving Advanced Research Service, Collaboration, and Pioneering Research Innovation( I )
OpenAlex ID: W7150728011
