Work

ReaxFF Molecular Dynamics Simulation and Experimental Validation of the Oxidation Mechanism of the C-Face of 6H-SiC Wafers under Different Hydroxyl Radical Concentrations

Year: 2026

Type: article

Source: Langmuir

DOI: 10.1021/acs.langmuir.6c00634

Authors: Shi Chen, Jiayun Deng, Junjiang Zhou, Sha Li, Xianglin Mu, Xiaoning Wen, Zilei Bai, Jiacheng Geng, Xueqin Pang

Institutions: Kunming University of Science and Technology, Zhejiang University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Analysis and Testing Foundation of Kunming University of Science and Technology

Awards: G7593595892, G7675244516, G8306695895

OpenAlex ID: W7150899110

FWCI: 3.531

Cites: 53

Cited by: 2

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