Work

Growth of High-Quality AlN Films through Polarity and Vacancy Defects Control

Year: 2026

Type: article

Source: Crystal Growth & Design

DOI: 10.1021/acs.cgd.5c01700

Authors: Zhan Zhang, Qian Chen, Qingquan Xiao, Bei Wang, Tinghong Gao

Institution: Guizhou University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Guizhou Science and Technology Department, Department of Education of Guizhou Province

Awards: G2716247070, G4351399667, G5759542906

OpenAlex ID: W7151036352

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Cites: 54

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