Work

Enhanced Performance of IZO/ZnO Heterostructure Thin-Film Transistors and Its Biosensing Applications via Single-Precursor Solution Process

Year: 2026

Type: article

Abstract: We report IZO/ZnO heterostructure thin film transistors (TFTs) fabricated by a single-precursor sol-gel process where a ZnO-rich surface region forms on an In-based oxide layer after annealing. The heterostructure improves the electrical response compared to a single-layer oxide TFT and provides a probe-free platform for biomolecule detection. As a demonstration, we detect pUC-18 plasmid DNA (2686 bp) over concentrations from 1 pg/mL to 10 ng/mL using transfer/output-curve changes as the sensing signal. The device exhibits a pronounced negative shift of threshold voltage and a strong increase in saturated current after exposure, enabling high sensitivity at low concentration; in particular, sensitivity exceeding 200% is obtained at 1 pg/mL, corresponding to a limit of detection of 1 pg/mL. These results suggest that the IZO/ZnO heterostructure TFT can serve as a simple and rapid probe-free biosensing platform produced via a low-cost solution process.

Source: ACS Omega

DOI: 10.1021/acsomega.5c12074

Authors: Da Ye Kim, Noah Jang, Hyunjun Kim, Daewoong Jung, Seong Ho Kong, June Soo Kim

Institutions: Kyungpook National University, Pusan National University, Cheongju University, Korea Electronics Technology Institute

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funder: Ministry of Education