Work

Modeling of the separated thermal emission currents in graphene–semiconductor 2D/3D Schottky junctions

Year: 2026

Type: article

Abstract: A new modeling theory of the separated emission currents in graphene–semiconductor Schottky junctions is reported in this work. Although some existing models modified by the Schottky diode equation can reproduce experimental data with a revised Richardson constant, the thermal emission current from graphene to a semiconductor cannot be calculated independently, and its physical meaning has not yet been well elucidated. In many previous models, the reverse current was simply defined using the thermal equilibrium condition. To fill this gap, we propose a new physics-based model that calculates the thermal emission currents across the 2D/3D junction based on the Landauer theory. This model has advantages compared with traditional methods. It calculates the two separated thermal emission current components independently and naturally satisfies the thermal equilibrium condition under the zero-bias condition. The non-ideal effects, including doping-enhanced barrier-lowering, are integrated into this model, leading to good agreement with experimental data. This model advances the understanding of the thermal emission current in graphene heterojunction electronic devices.

Source: AIP Advances

DOI: 10.1063/5.0319407

Authors: Fangxing Zhang, Changze Li, Yansheng Zhao, Chi Liu, Runsheng Wang, Lining Zhang

Institutions: Peking University, Chinese Academy of Sciences, Institute of Metal Research, Shenyang National Laboratory for Materials Science

Language: English

Topic: Graphene research and applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,350

Funder: National Natural Science Foundation of China