Work

Theoretical investigations on the confinement properties of InAlN/AlN/GaN heterostructures with InGaN/GaN multi-quantum wells back-barrier

Year: 2026

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/j.mseb.2026.119467

Authors: Xuehua Liu, Qiaoqiao Zhang, Honglu Cong, Yu Bai, Meilan Hao

Institutions: Cangzhou Jiaotong College, Zhengzhou University of Science and Technology, Chinese Academy of Sciences, Institute of Semiconductors

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: Canadian Anesthesiologists' Society, Chinese Academy of Sciences, Department of Education of Hebei Province, Hebei Provincial Department of Bureau of Science and Technology

Awards: G8119000030, G8346481859

OpenAlex ID: W7152496715

FWCI:

Cites: 63

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