Dislocation reduction in HVPE GaN via high temperature pretreatment of MOCVD-GaN/sapphire substrate
Year: 2026
Type: article
Abstract: In this paper, decomposition pits on the MOCVD-GaN/sapphire substrate were fabricated by the high temperature pretreatment (HTP) process for the purpose of reducing dislocations in the subsequently grown GaN by hydride vapor phase epitaxy (HVPE). The impact of atmosphere, temperature, and time during HTP on the substrate morphologies was characterized by scanning electron microscopy and transmission electron microscopy. The optimum HTP process was confirmed and integrated with the GaN growing process by HVPE. Cathodoluminescence and molten KOH–NaOH eutectic etching were used to evaluate the dislocation density of HVPE GaN. The dislocation density was reduced by orders of magnitude to 105 cm−2. The results indicated that the high temperature pretreatment process can effectively reduce dislocations of HVPE GaN.
Source: AIP Advances
DOI: 10.1063/5.0325333
Institutions: North University of China, Taiyuan University of Technology
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,350
OpenAlex ID: W7153031252