Work

Hafnium-Based Ferroelectric Post-Moore Electronics: Device Physics, Integration Architectures, and Neuromorphic System Implementation

Year: 2026

Type: article

Abstract: Hafnium-based ferroelectric (Hf-FEs) materials overcome the limitations of perovskite ferroelectric materials. Owing to their compatibility with the complementary metal-oxide-semiconductor process and high scalability, Hf-FEs devices have driven the development of non-volatile memory and neuromorphic computing, demonstrating significant potential for application in image processing and in-memory logic operations. First of all, this paper summarizes the material systems, device structure, and physical mechanisms relevant to Hf-FEs devices. Then, for the purpose of achieving efficient neuromorphic computing, the evaluation parameters related to Hf-FEs devices, specifically concerning storage performance and synaptic plasticity, are discussed. Furthermore, the progress of Hf-FEs devices in arrays and hardware integration is systematically reviewed, offering insights for future applications. Finally, this study explores in depth the prospects and challenges of these devices in advanced applications, providing valuable guidance for the development of high-performance neuromorphic computing devices.

Source: Nano-Micro Letters

DOI: 10.1007/s40820-026-02158-z

Authors: Xiangwei Chen, Zheng Wang, Jialin Meng, Tianyu Wang

Institutions: Shandong University, Fudan University, State Key Laboratory of Crystal Materials

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,690