Author Correction: Wafer-scale high-κ HfO2 dielectric films with sub-5-Å equivalent oxide thickness for 2D MoS2 transistors
Year: 2026
Type: erratum
Abstract: In the version of the article initially published, there were errors in Fig. 5f, g, i and associated text. The figure has been updated and for comparison, the original figure is available as Supplementary Information accompanying this amendment. In the Fig. 5g legend, now reading “…voltage gain and static power of an inverter as supply voltage from 0.2 to 1.0 V,” the range originally read “0.1 to 0.5 V.” In the Fig. 5k legend, the text now reading “at supply voltage of 1.0 V. The output frequency is 2.35 MHz,” the two values appeared originally as “0.5 V” and “3.15 MHz.” In the second paragraph of the Results “8-inch wafer-scale 2D circuits with 1.3-nm-HfO 2 ” section, in the sentences now reading “It shows a high gain of 40 and 205 at V dd of 0.2 and 1.0 V, respectively. At the same time, the static power is only 22 pW at V dd of 0.2 V,” “0.2 and 1.0 V” originally read “0.1 and 0.5 V” and “0.2 V” originally read “0.1 V”. The changes have been made in the HTML and PDF versions of the article.
Source: Nature Communications
Institutions: Hong Kong Polytechnic University, Songshan Lake Materials Laboratory, City University of Hong Kong, Chinese Academy of Sciences, Institute of Physics, University of Chinese Academy of Sciences, University of Cambridge, University of Electronic Science and Technology of China, Max Planck Institute for the Structure and Dynamics of Matter
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $6,990
OpenAlex ID: W7153991722
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