Work

Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0321156

Authors: Dongbin Kim, Jongsu Baek, Daehyun Kang, Dahee Seo, Wookyung Jeon, Youngkwan Cho, Hyoung Woo Kim, Myunghun Shin, Yohan Yoon, Byung Jin Cho

Institutions: Korea Advanced Institute of Science and Technology, Korea Aerospace University, Korea Electrotechnology Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Korea Research Institute for Defense Technology Planning and Advancement, Ministry of Trade, Industry and Energy

Awards: G2572957395, G2673191266

OpenAlex ID: W7154041935

FWCI: 1.976

Cites: 33

Cited by: 2

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