Work

Effect of doping of the intermediate layer on the RF performances of GaN-based p-i-n diodes

Year: 2026

Type: article

Abstract: In this article, we study the effect of the doping level in the intermediate layer of a pseudo-vertical GaN-based p-i-n diode. By decreasing the doping level, from 1.1 × 1016 to 1.6 × 1014 cm−3, we show that the OFF-state capacitance can be reduced by a factor 2.2, without affecting the ON-state resistance too much, which is increased by only 16%. The main consequence is an increase in the cutoff frequency by a factor 1.8, from 137 ± 5 to 250 ± 16 GHz. The DC characteristics of the diode are preserved since no significant variation of the turn on voltage has been found and no breakdown occurs for up to −200 V biasing.

Source: APL Electronic Devices

DOI: 10.1063/5.0319825