Work

Reaction mechanism for HF based cryogenic plasma etching of SiO2

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005378

Authors: Yeon Geun Yook, Hyunjae Lee, Sang Ki Nam, Mark J. Kushner

Institutions: University of Michigan, Samsung (South Korea), Samsung Electronics (South Korea)

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Samsung

OpenAlex ID: W7154156168

FWCI: 3.385

Cites: 67

Cited by: 2

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