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Drain Work-Function-Engineered Electrically Doped PNPN Tunnel Field-Effect Transistor for Ambipolar Current Suppression

Year: 2026

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782625604091

Authors: Wen-Bin Xu, Ying Liu, Tin Tin Ting

Institutions: Jimei University, INTI International University, Beijing Sport University, UNITAR International University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7154191262

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Cites: 34

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