Work

High-Resolution Cathodoluminescence Mapping for Doping Quantification across a Wide Range of Silicon Concentrations in GaN Epitaxial Layers

Year: 2026

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.6c00619

Authors: Zakariae M’qaddem, Névine Rochat, Gwénolé Jacopin, Blend Mohamad, Konrad Sakowski, Thomas Kaltsounis, Marc Veillerot, Matthew Charles, Julien Buckley, Łukasz Borowik

Institutions: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Laboratoire d'Électronique des Technologies de l'Information, Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Institut Néel, Université Grenoble Alpes, Institute of High Pressure Physics, University of Warsaw, Polish Academy of Sciences

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Awards: Enhanced Localized Epitaxy for GAN Transistors, PFNC equipements

OpenAlex ID: W7154231093

FWCI: 2.393

Cites: 62

Cited by: 1

Related to: