Work

Thickness-Dependent Crystallization and Device Performance in Ta-Doped Ge 2 Sb 2 Te 5 Phase Change Memory

Year: 2026

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.5c02345

Authors: Qi Zhang, Haotian Wang, Sannian Song, Yuan Xue, Zhitang Song

Institutions: Chinese Academy of Sciences, Shanghai Institute of Microsystem and Information Technology, University of Chinese Academy of Sciences, Shanghai University

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, Chinese Academy of Sciences, Science and Technology Commission of Shanghai Municipality

Awards: G12069908, G4942001990, G6491381007, G8216325920

OpenAlex ID: W7154234373

FWCI:

Cites: 25

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