Work

UV ozone oxidized high- k TaO x dielectric with van der Waals interface for two-dimensional electronic devices

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0321761

Authors: Tong Tong, Yuan Gao, Yinfeng Long, Kan Liao, Han Chen, Long Lin, Xiang Lan, Linghai Zhang, Lin Wang, Yucheng Jiang, Weisheng Li

Institutions: Suzhou University of Science and Technology, Nanjing University, Shanghai Jiao Tong University, Nanjing Tech University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Natural Science Research of Jiangsu Higher Education Institutions of China, National Key Research and Development Program of China, Science and Technology Program of Suzhou

Awards: G1230453743, G3069536915, G3547474452, G4351057488, G4718440019, G6392229154, G7200260368

OpenAlex ID: W7154271480

FWCI:

Cites: 43

Cited by:

Related to: