Work

High-throughput, non-destructive, three-dimensional imaging of GaN threading dislocations with in-plane Burgers vector component via phase-contrast microscopy

Year: 2026

Type: article

Abstract: We demonstrate a nondestructive, high-throughput method for imaging dislocations in GaN (0001) using phase-contrast microscopy (PCM). A one-to-one correspondence between threading dislocation contrasts in PCM and multiphoton excitation photoluminescence images confirms that PCM enables the detection of dislocations with in-plane Burgers vector components. The contrast morphology reflects dislocation inclination: vertical dislocations appear as dots, whereas inclined dislocations appear as lines. By shifting the focal plane from the top to the back surface, the three-dimensional propagation paths of dislocations can be traced. Dislocations separated by 1.3 μm are resolved. PCM also reveals scratches, subsurface scratches, facet boundaries, and voids.

Source: Applied Physics Express

DOI: 10.35848/1882-0786/ae5f58

Authors: Yukari Ishikawa, Ryo Hattori, Yongzhao Yao, Daiki Katsube, Koji Sato

Institutions: Japan Fine Ceramics Center, Nagaoka University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,365

Funder: Japan Society for the Promotion of Science