Work

Benchmarking of Ultrascaled Monolayer Halogenated Borophene Transistors: A Comprehensive First-Principles Quantum Transport Study

Year: 2026

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide Targeting high-performance and high-density application scenarios, this work systematically investigates the performance limits of ultrashort-channel double-gate (DG) MOSFETs based on halogenated borophene within a density functional theory (DFT)–nonequilibrium Green’s function (NEGF) quantum transport simulation framework. Key device metrics such as on-current, subthreshold swing, switching delay, and power consumption are analyzed for both n-type and p-type devices under various gate and underlap lengths. The optimal channel material selection and underlap length configuration are explored. Using B 4 Cl 4 and B 4 Br 4 as channel materials for nMOSFET and pMOSFET, respectively, significantly improves the subthreshold performance, ON-OFF ratio, and energy-delay product. Furthermore, selecting appropriate underlap lengths for different gate lengths enables further device performance optimization. These findings provide a crucial theoretical foundation for the material and structural design and optimization of ultrascaled two-dimensional semiconductor transistors in the post-Moore era.

Source: ACS Omega

DOI: 10.1021/acsomega.5c09965

Authors: Shuo Zhang, Zhicheng Guo, Qi Shen, Sichao Du, Hao Xie, Wen-Yan Yin

Institutions: Hangzhou City University, Zhejiang University

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $1,935

Funders: Zhejiang Provincial Postdoctoral Science Foundation, National Natural Science Foundation of China, Zhejiang University