Work

Electron drift velocity measurement of AlGaN/GaN single- and multi-channel Fin structures

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0314039

Authors: Qingru Wang, Quan Dai, Xinkun Zhang, Yu Zhou, Xiaoning Zhan, Qian Li, Jianxun Liu, Jiaanli Wang, Cheng Li, Qian Sun, Meixin Feng, Hui Yang

Institutions: University of Science and Technology of China, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Youth Innovation Promotion Association of the Chinese Academy of Sciences, Basic Research Program of Jiangsu Province, National Key Research and Development Program of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1024630885, G1058890890, G2799326589, G3016912322, G3187034851, G369126902, G4332241254, G4796349636, G4929730729, G5739167345, G7243388396

OpenAlex ID: W7154350120

FWCI:

Cites: 23

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