Retention improvement in vertical NAND flash memory using block soft erase scheme
Year: 2026
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0310928
Institutions: Seoul National University, SK Hynix (South Korea)
Language: English
Subfield: Computer Networks and Communications
Field: Computer Science
Domain: Physical Sciences
Open Access status: closed
Funders: SK Hynix, Seoul National University
Award: G3261825972
OpenAlex ID: W7154374460