Work

Numerical investigation of rotating flow suction effects on transport phenomena in polysilicon chemical vapor deposition

Year: 2026

Type: article

Abstract: Deposition rate and uniformity are critical metrics for evaluating polysilicon chemical vapor deposition (CVD) performance. This study develops a 2D model integrating coupled transport phenomena and reaction kinetics to numerically analyze the SiHCl3-H2 system, validated against literature data. Through single factor and orthogonal analysis, the susceptor rotation speed is identified as a key parameter governing deposition characteristics. Numerical results demonstrate that the deposition characteristics are strongly correlated with boundary layer thickness, which is effectively regulated by the rotation-induced suction effect. This suction effect promotes the formation of thinner and more uniform boundary layers, leading to a significant increase in the average Nusselt number (Nu) from 38 to 98, indicative of enhanced heat transfer. Specifically, at 1000 rpm rotation speed, the polysilicon deposition rate increased from 3.05 μm/min to 6.40 μm/min, while deposition uniformity was enhanced with relative deviation reduced from 49.2% to 8.1% compared to stationary conditions. The strong correlation between rotation speed, Nu enhancement, and deposition performance highlights the suction effect as a promising strategy for optimizing polysilicon CVD processes.

Source: Case Studies in Thermal Engineering

DOI: 10.1016/j.csite.2026.108059