Work

GaN lateral pn junctions by MBE in situ selective area sublimation and regrowth

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005402

Authors: Hardik Murarka, Jayeesh Arora, Madhav Ramesh, Thai-Son Nguyen, Debaditya Bhattacharya, Kathleen Smith, Chandrashekhar Savant, Jimy Encomendero, Vladimir Protasenko, Huili Grace Xing, Debdeep Jena

Institution: Cornell University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Semiconductor Research Corporation, Defense Sciences Office, DARPA

Awards: G1189720529, G285379880, NNCI: Cornell NanoScale Science and Technology Facility (CNF)

OpenAlex ID: W7154586709

FWCI:

Cites: 22

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