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Guest Editorial: Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors, 2nd Edition

Year: 2026

Type: editorial

Abstract: Following the remarkable success of the first edition, we are honored to present the second edition of the Special Issue titled “Recent Advances in III-Nitride Semiconductors and Correlated Wide Bandgap Semiconductors” [...]

Source: Crystals

DOI: 10.3390/cryst16040270

Authors: Peng Chen, Zhizhong Chen

Institutions: Nanjing University, Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,534

OpenAlex ID: W7154749147

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