Work

On the radiation damage tolerance of multilayer and single-layer coatings within the ZrN/SiNx system subjected to helium ion implantation

Year: 2026

Type: article

Abstract: We report on the microstructural evolution of ZrN/SiN x bilayers and multilayers after He ions implantation, comparatively to their monolithic (i.e., ZrN and SiN x ) counterparts. Films with a total thickness of 300 nm are synthesized by reactive magnetron sputtering, and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM) and time-of-flight elastic recoil detection analysis (ToF-ERDA) in their as-deposited and implanted states (fluence of 7 × 10 16 ions/cm 2 ). The as-deposited multilayer ZrN/SiN x films are characterized by sharp interfaces that delineate amorphous SiN x and polycrystalline ZrN layers. Distinct microstructural evolutions after He implantation are revealed for the constitutive single-layers. The formation of cavities with typical size around 10 nm is observed in SiN x , accompanied by an extensive loss of He. For monolithic ZrN, the implanted He does not induce any visible extended defects, but causes lattice distortion, especially in <111>-oriented grains. The presence of interfaces does not significantly alter the overall radiation damage response (in relation to monolithic films), resulting in a relative macroscopic swelling of 10–15% for bilayer periods Λ between 8 and 42 nm. A detailed TEM investigation performed on the implanted multilayer with Λ = 20 nm reveals different depth-profiles of individual layer thickness expansion, originating from the He concentration profile for ZrN and damage profile for SiN x . ZrN monolithic films, characterized by a columnar growth morphology and exempt of He-induced cavities, show the best radiation resistance.

Source: Surface and Coatings Technology

DOI: 10.1016/j.surfcoat.2026.133510