Year: 2026
Type: conference-paper
Abstract: Hopkins' TCC formula is conventionally used in optical lithography simulation.However, in EUV lithography, the TCC formula must be modified to account for the mask 3D (M3D) effect of the thick EUV mask absorber.In the previous paper, we proposed the STCC (Source-position dependent TCC) formula, which used three TCCs (TCC, TCCSX, and TCCSY) to represent the source-position dependence of the M3D effect.The STCC formula was the basis of our CNN model, accelerating EUV lithography simulations.In this report, the STCC formula is extended to include the polarization effect, which is not negligible in high-NA EUV lithography.We show that an additional coherence function Cρ must be introduced into the STCC formula.Cρ represents the effect of the electric field rotation in the meridional plane, which depends on the polarization ρ = x or y.As a result, six TCCs (TCCρ, TCCSXρ, and TCCSYρ) are required for high-NA EUV lithography simulation.
Institution: Institute of Science Tokyo
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W7155024304
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