Work

Small polaron-mediated zero differential transconductance of 2D semiconductor/CoFe2O4 heterojunctions for plateau transistor applications

Year: 2026

Type: article

Abstract: The binary paradigm of modern electronics imposes intrinsic limits on information density and energy efficiency. Zero differential transconductance (ZDT)-based multi-valued logic (MVL) offers a promising alternative, providing a compelling platform for MVL architectures. However, achieving stable and tunable ZDT operation remains challenging due to the difficulty of precisely controlling ZDT behavior. Here, we present the plateau transistors (ptTs), which enables highly tunable, intrinsic ternary operation through a distinctive polaron-mediated charge transport mechanism. Polaronic behavior in cobalt ferrite (CoFe2O4) was predicted through simulations and subsequently confirmed using a designed charge-smearing near-infrared spectroscopy technique. Incorporating a CoFe2O4 gate dielectric yields stable near-ZDT operation within a standard field-effect transistor architecture, enabling distinct electrical separation of multiple logic states. We further demonstrated that this approach is broadly applicable to a wide range of 2D materials, including MoS2, graphene, and WSe2. The demonstrated ternary operation provides a viable device-level platform for multi-level signal representation, offering new opportunities for energy-efficient electronic devices. Multi-valued logic (MVL) devices hold promise to reduce the footprint and energy consumption of future electronic circuits. Here, the authors report the realization of zero differential transconductance plateau transistors based on 2D materials/CoFe2O4 heterojunctions, showing their application for MVL devices.

Source: Nature Communications

DOI: 10.1038/s41467-026-71814-0