Work

Enhancing thermoelectric performance of GeTe monolayer via modulation doping at Ge sites

Year: 2026

Type: article

Source: Nanotechnology

DOI: 10.1088/1361-6528/ae6274

Authors: L J Gong, R S Cheng, Q Z Han, J Yang, H L Shi, Y H Zhao, Z T Jiang

Institutions: Beijing Institute of Technology, Beijing Academy of Quantum Information Sciences, Shanxi Datong University, Chinese Academy of Sciences, University of Chinese Academy of Sciences

Language: English

Topic: Advanced Thermoelectric Materials and Devices

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3858035391

OpenAlex ID: W7155046543

FWCI:

Cites: 23

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