Work

Epitaxial n-ZnO/MoS 2 /p-GaN Heterostructure Light-Emitting Diodes

Year: 2026

Type: article

Abstract: High Resolution Image Download MS PowerPoint Slide We investigated an epitaxial strategy for fabricating MoS 2 light-emitting diodes (LEDs). A full-coverage MoS 2 active layer was grown on p-type GaN, and n-type ZnO nanorods were then vertically aligned on the MoS 2 to form a p–n junction with negligible damage to the MoS 2 . All materials have nearly matched hexagonal structures, enabling single-crystal alignment. Although the continuous MoS 2 film formed multiple layers (MLs), the ZnO/MoS 2 /GaN heterostructure yielded favorable optical characteristics of the ML-MoS 2, including internal quantum efficiency comparable to that of the single-layer MoS 2 . The ZnO/MoS 2 /GaN LED exhibited stable A and B exciton emissions, which imply direct bandgap transition with spin–orbit coupling. Without mechanically exfoliated or transferred 2D films, this epitaxial approach satisfies the key requirements for fabricating 2D-based optoelectronic and quantum light sources. The strength of epitaxy, such as large-scale scalability and multiple quantum-well formation, will further advance 2D optoelectronics, making them more practical and efficient.

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c06430