Work

Levels of substitutional copper disturbed by an oxygen atom in n-type silicon

Year: 2026

Type: article

Source: Journal of Applied Physics

DOI: 10.1063/5.0332787

Authors: Nikolai Yarykin, Jörg Weber

Institutions: Institute of Microelectronics Technology and High Purity Materials, Technische Universität Dresden

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7155173225

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Cites: 39

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