Work

Electrically active oxide defects in Ni/Al2O3/4H-SiC diodes mimicking CAV-related defect levels

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0329725

Authors: Sandeep K. Chaudhuri, Ritwik Nag, Jarod Stefurak, Dongkyu Lee, Ebenezer Seesi, Iftikhar Ahmad, Krishna C. Mandal

Institution: University of South Carolina

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Science Foundation

OpenAlex ID: W7155180331

FWCI: 1.692

Cites: 48

Cited by: 1

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