Work

Achieving an ultra-thin GaN channel layer in AlGaN/GaN/AlN high electron mobility transistors

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0333037

Authors: Junchuan Zhang, Jiaming Wang, Fujun Xu, Hao Tian, Wen Liu, Jing Lang, Chengzhi Ji, Wenyu Li, Shicheng Gao, Pengyun Chen, Min Yang, Xuelin Yang, Ning Tang, Xinqiang Wang, Weikun Ge, Bo Shen

Institutions: Peking University, State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Xi’an Jiaotong-Liverpool University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Science and Technology Major Project, Basic Research Program of Jiangsu Province

Awards: G109783806, G1811993029, G3012902938, G3395575463, G3858795724, G6139478012

OpenAlex ID: W7155187034

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Cites: 27

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