Work

Lateral GaN Schottky superjunction diodes with buried p-GaN by NH3-MBE

Year: 2026

Type: article

Abstract: In this work, we demonstrate lateral GaN Schottky superjunction diodes using a p–n–p layer structure. The lateral nature of these devices circumvents the difficulties in achieving charge balance with etch and regrowth techniques. The p–n–p layer Schottky superjunction diodes are compared to reference lateral Schottky diodes on n-GaN to demonstrate the effect of net dopant balance in reverse bias, which resulted in an ∼80× improvement in breakdown voltage with the charge balanced layers with no degradation in the forward on-state characteristics.

Source: APL Electronic Devices

DOI: 10.1063/5.0294724

Authors: Z. J. Biegler, W. Y. Ho, E. Farzana, S. Krishnamoorthy, J. S. Speck

Institution: University of California, Santa Barbara

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: diamond

Funder: Advanced Research Projects Agency - Energy

Award: G4207585070