An Integrated Photo-Magnetic Sensor Chip Using Giant Magnetoresistance (GMR) and Light-Dependent Resistor (LDR) Technologies Based on Microfabrication Compatibility
Year: 2026
Type: article
Abstract: Single-chip integration technology for multifunctional sensors has become an important development direction due to its low power consumption and versatile functionality. However, the fabrication compatibility between different sensing components remains a key challenge for high-performance integrated sensors, often leading to complex processes and increased costs. This work presents a microfabrication-compatible photo-magnetic integrated sensor chip based on micro–nano processing methods. The integrated sensor chip includes giant magnetoresistance (GMR) and a light-dependent resistor (LDR). The fabrication process was based on standard MEMS fabrication with compatibility and cost-effectiveness. The experimental results demonstrated that the chip can simultaneously realize both optical and magnetic detection with magnetic field sensitivity of 3.74 mV/Oe and photodetection sensitivity of 0.79 μA/(μW/cm2) at a 5 V bias. The integrated sensor features high-sensitivity magnetic performance and weak-light detection capability, with promising application in robotics and advanced manufacturing fields.
Source: Micromachines
DOI: 10.3390/mi17050511
Institutions: Shanghai University, Shanghai Jiao Tong University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
Award: G1418901231
OpenAlex ID: W7155205196
