Work

Ultrathin Hf 0.5 Zr 0.5 O 2 Films with ZrO 2 Seed Layer for Ferroelectric Tunnel Junctions in Crossbar Array

Year: 2026

Type: article

Source: ACS Applied Materials & Interfaces

DOI: 10.1021/acsami.6c03702

Authors: Sung Hyuk Park, Jae Young Kim, Daechoon Kim, Jaehyun Kim, In Hyuk Im, Hyunseong Kim, Yoon Jung Lee, Seung Ju Kim, Sohyeon Park, Ji Hyun Baek, Youngmin Kim, Hyeon Ji Lee, Ho Won Jang

Institutions: Seoul National University, Texas A&M University, Kookmin University, University of Southern California, Advanced Institute of Convergence Technology

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Research Foundation of Korea, Ministry of Science and ICT, South Korea

Awards: G1792676949, G5308334441, G6677533604

OpenAlex ID: W7155556183

FWCI: 3.531

Cites: 47

Cited by: 2

Related to: