Work

Gate-length scaling of AlGaN/GaN HEMTs for cryogenic low-noise operation

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0325467

Authors: Mohamed Aniss Mebarki, Ferrand Drake Del Castillo Ragnar, François Joint, Denis Meledin, Erik Sundin, Mattias Thorsell, Niklas Rorsman, Victor Belitsky, Vincent Desmaris

Institution: Chalmers University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7156301900

FWCI: 2.475

Cites: 20

Cited by: 1

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