Year: 2026
Type: article
Abstract: Cryo-computing – both classical and quantum, is severely limited by the absence of a suitable cryo-memory. The challenges both in terms of energy efficiency and speed have been known for decades, but so far conventional technologies have not been able to deliver adequate performance. Here we present a non-volatile memory device which incorporates a superconducting nanowire and an all-electronic charge configuration memristor (CCM) based on switching between charge-ordered states in a layered dichalcogenide material. We numerically investigate the time-dynamics and current-voltage characteristics of such a device by modelling of the superconducting order parameter. The observed current-voltage response is faithfully reproduced by fabricated devices using a NbTiN nanowire and a 1 T -TaS 2 CCM element. The inherent ultrahigh energy efficiency and speed of the device, which is in principle compatible with single flux quantum logic, leads to a promising memory concept for use in cryo-computing and quantum computing peripheral devices.
Source: Communications Physics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,990
Awards: G1488700179, Nonequilibrium Quantum System Dynamics, The National Research Infrastructure Center in the field of nanotechnology and materials (IP Nanocenter), International, Interdisciplinary and Intersectoral Postdocs, G3991958468, Nanoscience Foundries and Fine Analysis - Europe|PILOT, G5548597597, Single-flux-quantum controlled charge configurational memory (CCM) devices
OpenAlex ID: W7159927682