Phosphorus-doped carbon quantum dots for broadband self-powered n-Si Schottky photodetectors with enhanced quantum efficiency and detectivity
Year: 2026
Type: article
Abstract: Phosphorus-doped carbon quantum dots (P-CQDs) act as synergistic interface regulators in self-powered n-Si Schottky photodetectors with increased quantum efficiency (∼23%), providing surface defect passivation and optimized energy level alignment.
Source: Materials Advances
DOI: 10.1039/d6ma00351f
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,962
OpenAlex ID: W7159944113
