Work

Density-controlled Stranski–Krastanow GaN quantum dots grown on in-plane ordered AlN nanowires

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0328144

Authors: M. Canciani, F. Jourdan, A. Revilla-Martín, C. Guérin, B. Gayral, J. L. Rouvière, B. Daudin

Institutions: Institut polytechnique de Grenoble, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Institut de Recherche Interdisciplinaire de Grenoble, University of Milano-Bicocca, Université Grenoble Alpes, Centre National de la Recherche Scientifique, Institut Néel

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Agence Nationale de la Recherche

Awards: G2589966243, Réseau national sur GaN

OpenAlex ID: W7160012795

FWCI:

Cites: 23

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