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Technology Computer‐Aided Design Analysis of the Impact of Impurities and Traps in the AlGaN Barrier of GaN HEMTs on the C–V Characteristics of Metal–Insulator–Semiconductor Structures

Year: 2026

Type: article

Source: physica status solidi (a)

DOI: 10.1002/pssa.70372

Authors: Kosuke Miura, Takeshi Suwa, Ryohei Nega

Institutions: Toshiba (Japan), Toshiba Electronic Devices & Storage Corporation (Japan)

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W7160037870

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Cites: 24

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