Work

Microscopic origin of dopant-dependent defect states and carrier compensation in Si- and Sn-doped β -Ga2O3

Year: 2026

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0332528

Authors: Ziqian Sheng, Taiqiao Liu, Yiru Zhao, Ning Jia, Duanyang Chen, Hongji Qi, Tien-Lin Lee, Yuzheng Guo, Zhaofu Zhang, Kelvin H. L. Zhang

Institutions: Xiamen University, Collaborative Innovation Center of Chemistry for Energy Materials, Wuhan University, Chinese Academy of Sciences, Shanghai Institute of Optics and Fine Mechanics, Diamond Light Source

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Science and Technology Commission of Shanghai Municipality, National Key Research and Development Program of China

Awards: G3143377573, G5586658670, G7280589854, G8617141004

OpenAlex ID: W7160039669

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Cites: 46

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