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High-performance vertical β -Ga2O3 Schottky barrier diodes utilizing sputtered p-NiO double mesa junction termination extension

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005386

Authors: Hao Peng, Jiale Huo, Xuefeng Zheng, Guangwei Xu, Xuanze Zhou, Chong Wang

Institutions: Xidian University, China Electronics Technology Group Corporation, University of Science and Technology of China

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2565301599, G3152003617, G4285901568, G4786473936, G5057763501

OpenAlex ID: W7160043722

FWCI:

Cites: 41

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