Work

Inductively coupled plasma reactive ion etching of rutile-structured Ge0.64Sn0.36O2 with BCl3/Ar plasmas

Year: 2026

Type: article

Source: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

DOI: 10.1116/6.0005234

Authors: Charlotte Banta, Satyam P. Patel, Ahmad M. Abed, Rebecca L. Peterson

Institution: University of Michigan

Language: English

Topic: Plasma Diagnostics and Applications

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Science Foundation, Semiconductor Research Corporation

Awards: FuSe-TG: Co-Design of Germanium Oxide-based Semiconductors from Deposition to Devices, Collaborative Research: FuSe: GeSnO2 Alloys for Next-Generation Semiconductor Devices, REU Site: Semiconductor Hands-On Research Experience (SHORE)

OpenAlex ID: W7160077408

FWCI:

Cites: 38

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